Flower-Shaped Domains and Wrinkles in Trilayer Epitaxial Graphene on Silicon Carbide
نویسندگان
چکیده
Trilayer graphene is of particular interest to the 2D materials community because of its unique tunable electronic structure. However, to date, there is a lack of fundamental understanding of the properties of epitaxial trilayer graphene on silicon carbide. Here, following successful synthesis of large-area uniform trilayer graphene, atomic force microscopy (AFM) showed that the trilayer graphene on 6H-SiC(0001) was uniform over a large scale. Additionally, distinct defects, identified as flower-shaped domains and isolated wrinkle structures, were observed randomly on the surface using scanning tunneling microscopy and spectroscopy (STM/STS). These carbon nanostructures formed during growth, has different structural and electronic properties when compared with the adjacent flat regions of the graphene. Finally, using low temperature STM/STS at 4K, we found that the isolated wrinkles showed an irreversible rotational motion between two 60° configurations at different densities of states.
منابع مشابه
Magnetotransport in high mobility epitaxial graphene
Epitaxial graphene layers grown on single-crystal SiC have large structural coherence domains and can be easily patterned into submicron structures using standard microelectronics lithography techniques. Patterned structures show two-dimensional electron gas properties with mobilities exceeding 3 m2/Vs. Magnetotransport measurements (Shubnikov–de Haas oscillations) indicate that the transport p...
متن کاملEpitaxial graphene on silicon carbide: Introduction to structured graphene
We present an introduction to the rapidly growing field of epitaxial graphene on silicon carbide, tracing its development from the original proof-of-concept experiments a decade ago to its present, highly evolved state. The potential of epitaxial graphene as a new electronic material is now being recognized. Whether the ultimate promise of graphene-based electronics will ever be realized remain...
متن کامل100-GHz transistors from wafer-scale epitaxial graphene.
The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that o...
متن کاملField effect in epitaxial graphene on a silicon carbide substrate
Field effect in epitaxial graphene on a silicon carbide substrate Gong Gu Sarnoff Corporation, CN5300, Princeton, New Jersey 08543 Shu Nie and R. M. Feenstra Department of Physics, Carnegie Mellon University, Pittsburgh, Pennsylvania 15213 R. P. Devaty and W. J. Choyke Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 152650 Winston K. Chan and Michael G. K...
متن کامل